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pulse-width-modulation control circuits az7500b data sheet 1 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited general description the az7500b is a voltage mode pulse width modula- tion switching regulator control circuit designed pri- marily for power supply control. the az7500b consists of a reference voltage circuit, two error amplifiers, an on-c hip adjustable oscillator, a dead-time control (dtc) co mparator, a pulse-steering control flip-flop, and an out put control circuit. the pre- cision of voltage reference (v ref ) is improved up to 1% through trimming and this provides a better output voltage regulation. the az7500b provides for push- pull or single-ended output operation, which can be selected through the output control. the difference between az7500b and az7500c is that they have 4.95v and 5v reference voltage respectively. the az7500b is available in standard packages of dip-16 and soic-16. features stable 4.95v reference voltage trimmed to 1.0% accuracy uncommitted output tr for 200ma sink or source current single-end or push-pull operation selected by output control internal circuitry prohibits double pulse at either output complete pwm control circuit with variable duty cycle on-chip oscillator with master or slave opera- tion applications smps back light inverter charger figure 1. package types of az7500b soic-16 dip-16
pulse-width-modulation control circuits az7500b data sheet 2 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited figure 2. pin configuration of az7500b (top view) m package (soic-16) figure 3. functional block diagram of az7500b functional block diagram signal for output control output function v i = gnd single-ended or parallel output v i = v ref normal push-pull operation output function control table oscillator 0.12v 5 6 ct rt 4 dtc 1in + 1in - 2in + 2in - 1 2 16 15 error amplifier 1 error amplifier 2 dead-time control comparator d ck 3 feedback pwm comparator pulse-steering flip-flop output ctrl 13 reference regulator q1 q2 12 10 11 9 8 c1 e1 c2 e2 v cc ref gnd 14 7 0.7ma + + + + pin configuration 1in + 1in - feedback dtc ct rt gnd c1 2in + 2in - ref output ctrl v cc c2 e2 e1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1in + 1in - feedback dtc ct rt gnd c1 2in + 2in - ref output ctrl v cc c2 e2 e1 p package (dip-16)
pulse-width-modulation control circuits az7500b data sheet 3 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited ordering information package temperature range part number marking id packing type lead free green lead free green soic-16 -40 to 85 o c az7500bm-e1 az7500bm-g1 az7500bm-e1 az7500bm-g1 tube az7500bmtr-e1 az7500bmtr-g1 az7500bm-e1 az7500bm-g1 tape & reel dip-16 az7500bp-e1 AZ7500BP-G1 az7500bp-e1 AZ7500BP-G1 tube circuit type e1: lead free g1: green az7500b - tr: tape and reel blank: tube package m: soic-16 p: dip-16 bcd semiconductor's pb-free products , as designated with "e1" suffix in the pa rt number, are rohs compliant. products with "g1" suffix are available in green packages.
pulse-width-modulation control circuits az7500b data sheet 4 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operat ion of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings"for extended periods may affect device reliability. note 2: all voltage values are with respect to the network ground terminal. note 3: maximum power dissipation is a function of t j (max), r ja and t a . the maximum allowable power dissi- pation at any allowable am bient temperature is p d = ( t j (max) - t a )/r ja . operating at the absolute maximum t j of 150 o c can affect reliability. parameter symbol value unit supply voltage (note 2) v cc 40 v amplifier input voltage v i -0.3 to v cc + 0.3 v collector output voltage v o 40 v collector output current i o 250 ma package thermal impedance (note 3) r ja m package 73 o c/w p package 67 lead temperature 1.6mm from case for 10 seconds 260 o c storage temperature range t stg -65 to 150 o c esd rating (machine model) 200 v recommended operating conditions parameter symbol min typ max unit supply voltage v cc 71536v collector output voltage v c1 , v c2 30 36 v collector output current (each transistor) i c1 , i c2 200 ma amplifier input voltage v i 0.3 v cc - 2 v current into feedback terminal i fb 0.3 ma reference output current i ref 10 ma timing capacitor c t 0.00047 0.001 10 f timing resistor r t 1.8 30 500 k ? oscillator frequency f osc 1.0 40 200 khz pwm input voltage (pin 3, 4, 14) 0.3 5.3 v operating free-air temperature t a -40 85 o c absolute maximum ratings (note 1)
pulse-width-modulation control circuits az7500b data sheet 5 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit reference section output reference voltage v ref i ref =1ma 4.90 4.95 5.0 v i ref =1ma, t a = -40 to 85 o c 4.85 4.95 5.05 v line regulation r line v cc = 7v to 36v 2 25 mv load regulation r load i ref =1ma to 10ma 1 15 mv short-circuit output current i sc v ref = 0v 10 35 50 ma oscillator section oscillator frequency f osc c t =0.001 f, r t =30k ? ,40 khz c t =0.01 f, r t =12k ? 9.2 10 10.8 c t =0.01 f, r t =12k ? , t a = -40 to 85 o c 9.0 12 frequency change with temperature ? f / ? tc t =0.01 f, r t =12k ? , t a = -40 to 85 o c 1% dead-time control section input bias current i bias v cc =15v, v4= 0 to 5.25v -2 -10 a maximum duty cycle d(max) v cc =15v, v4= 0v, pin 13= v ref 45 % input threshold voltage v ith zero duty cycle 3 3.3 v maximum duty cycle 0 error-amplifier section input offset voltage v io v3 = 2.5v 2 10 mv input offset current i io v3 = 2.5v 25 250 na input bias current i bias v3 = 2.5v 0.2 1 a common-mode input voltage range v cm v cc =7v to 36v -0.3 v cc -2 v open-loop voltage gain g vo v o =0.5v to 3.5v 70 95 db unity-gain bandwidth bw 650 khz common-mode rejection ratio cmrr 65 80 db output sink current (feedback) i sink v id = -15mv to -5v, v3 = 0.7v -0.3 -0.7 ma output source current (feedback) i source v id =15mv to 5v v3 = 3.5v 2ma t a =25 o c, v cc =20v, f=10khz unless otherwise noted. electrical characteristics
pulse-width-modulation control circuits az7500b data sheet 6 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit pwm comparator section input threshold voltage v ith zero duty cycle 4 4.5 v input sink current i sink v3 = 0.7v -0.3 -0.7 ma output section output saturation voltage common emitter v ce (sat) v e = 0v, i c =200ma 1.1 1.3 v emitter follower v cc (sat) v cc = 15v, i e = -200ma 1.5 2.5 collector off-state current i c (off) v ce = 36v, v cc =36v 2 100 a emitter off-state current i e (off) v cc = v c = 36v, v e = 0 -100 a total device supply current i cc pin 6 = v ref , v cc =15v 6 10 ma output switching characteristics rise time t r common emitter common collector 100 200 ns fall time t f common emitter common collector 25 100 ns electrical characteristics (continued)
pulse-width-modulation control circuits az7500b data sheet 7 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited voltage at ct voltage at c2 voltage at c1 v cc 0v v cc 0v 0v dtc threshold voltage threshold voltage feedback 0.7v duty cycle 0% max 0% figure 4. operational test circuit and waveforms voltage waveforms test circuit 12k ? 0.01uf 50k ? dtc feedback rt ct 1in+ 1in- 2in+ 2in- output ctrl test inputs 4 3 6 5 1 2 16 15 13 c1 e1 c2 e2 ref gnd v cc 14 10 11 9 8 12 v cc = 20v 150 ? 4w 150 ? 4w output 1 output 2 7 parametr measurement information
pulse-width-modulation control circuits az7500b data sheet 8 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited v ref amplifier under test feedback v i other amplifier + + each output circuit c l = 15pf (see note a) 68 ? 4w 20v output 90% 10% 10% 90% t f t r each output circuit c l = 15pf (see note a) 68 ? 4w 20v output 90% 10% 10% 90% t f t r figure 5. error amplifier characteristics figure 6. common-emitter configuration figure 7. emitter-follower configuration note a: c l includes probe and jig capacitance. note a: c l includes probe and jig capacitance. parametr measurement information (continued)
pulse-width-modulation control circuits az7500b data sheet 9 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited figure 8. oscillator frequency vs. rt and ct figure 9. error amplifier small-signal voltage gain vs. frequency 1 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 v cc =20v ? v o =3v t a =25 o c voltage gain (db) frequency (hz) typical performance characteristics 1k 10k 100k 1m 1k 10k 100k 0.1 f 0.01 f f - oscillator frequency (hz) rt - timing resistance ( ? ) 0.001 f v cc =20v t a =25 o c
pulse-width-modulation control circuits az7500b data sheet 10 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited typical application + + + + 12 11 8 3 2 14 15 1 16 5 6 10 13 9 7 4 50 10v 50 10v 0.001 50 50v 0.1 1mh 2a 5.1k 0.1 47k 1m 150 47 ksa1010 5.1k 5.1k 150 (v o =5v, i o =1a) (v i =10v to 40v) gnd v i (+) v i (-) v o az7500b v cc c2 c1 feed back 1in- ref 2in- 1in+ 2in+ ct rt e2 output ctrl e1 gnd dtc figure 10. pulse width modulated step-down converter
pulse-width-modulation control circuits az7500b data sheet 11 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited mechanical dimensions soic-16 unit: mm(inch) 7 9 . 8 0 0 ( 0 . 3 8 6 ) 1 0 . 2 0 0 ( 0 . 4 0 2 ) 5.800(0.228) 6.240(0.246) 0.330(0.013) 0.510(0.020) 20:1 a 1.350(0.053) 1.750(0.069) 1.250(0.049) 1.650(0.065) 7 0 8 b c 1 . 0 0 0 ( 0 . 0 3 9 ) s 1.000(0.039) 0.200(0.008) 20:1 b c 50:1 c-c 0 . 2 0 0 ( 0 . 0 0 8 ) 0 . 2 5 0 ( 0 . 0 1 0 ) 0.400(0.016) 1.270(0.050) 0 . 2 5 0 ( 0 . 0 1 0 ) 1.270(0.050) bsc depth 0.200(0.008) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 0 5 0 ( 0 . 0 0 2 ) r0.200(0.008) r0.200(0.008) 0 . 1 7 0 ( 0 . 0 0 7 ) 0 . 2 5 0 ( 0 . 0 1 0 ) a 3.800(0.150) 4.040(0.159) 3 8 9 . 5 8 8 7 0.400(0.016) 45 note: eject hole, oriented hole and mold mark is optional.
pulse-width-modulation control circuits az7500b data sheet 12 apr. 2010 rev. 1. 6 bcd semiconductor manufacturing limited mechanical dimens ions (continued) dip-16 unit: mm(inch) note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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